个人信息Personal Information
教授
博士生导师
硕士生导师
性别:女
毕业院校:大连理工大学
学位:博士
所在单位:材料科学与工程学院
学科:材料物理与化学
办公地点:三束实验室2号楼302室
联系方式:0411-84708380-8302
电子邮箱:lixiaona@dlut.edu.cn
Highly stable carbon-doped Cu films on barrierless Si
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论文类型:期刊论文
发表时间:2011-02-01
发表刊物:APPLIED SURFACE SCIENCE
收录刊物:SCIE、EI
卷号:257
期号:8
页面范围:3636-3640
ISSN号:0169-4332
关键字:Cu interconnects; Carbon; Thin film; Metallization
摘要:Electrical resistivities and thermal stabilities of carbon-doped Cu films on silicon have been investigated. The films were prepared by magnetron sputtering using a Cu-C alloy target. After annealing at 400 degrees C for 1 h, the resistivity maintains a low level at 2.7 mu Omega-cm and no Cu-Si reaction is detected in the film by X-ray diffraction (XRD) and transmission electron microscopy (TEM) observations. According to the secondary ion mass spectroscopy (SIMS) results, carbon is enriched near the interfacial region of Cu(C)/Si, and is considered responsible for the growth of an amorphous Cu(C)/Si interlayer that inhibits the Cu-Si inter-diffusion. Fine Cu grains, less than 100 nm, were present in the Cu(C) films after long-term and high-temperature annealings. The effect of C shows a combination of forming a self-passivated interface barrier layer and maintaining a fine-grained structure of Cu. A low current leakage measured on this Cu(C) film also provides further evidence for the carbon-induced diffusion barrier interlayer performance. (C) 2010 Elsevier B.V. All rights reserved.