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论文类型：期刊论文

发表时间：2010-05-03

发表刊物：APPLIED PHYSICS LETTERS

收录刊物：SCIE、EI

卷号：96

期号：18

ISSN号：0003-6951

关键字：annealing; carbon; copper alloys; doping; electrical resistivity; grain growth; metallic thin films; sputter deposition; thermal stability

摘要：Interfacial structures and electrical resistivities of a carbon-doped Cu film at different annealing temperatures and times were investigated. The film was prepared by magnetron sputtering on barrierless silicon. After annealing, grain growth was distinctly hindered and a carbon-containing nanometer thick passive amorphous layer was formed at the film/substrate interface. The film had a resistivity of about 2.7 mu cm after annealing at 400 degrees C for 1 h and maintained a low resistivity of 3.8 mu cm even after 9 h annealing at 400 degrees C. The low electrical resistivity in combination with the high thermal stability makes carbon doping a promising technique for future Cu interconnects on barrierless Si. (C) 2010 American Institute of Physics. [doi:10.1063/1.3427408]