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SnO2-Si光电极制备及其降解污染物性能

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Indexed by:期刊论文

Date of Publication:2019-01-30

Journal:大连理工大学学报

Included Journals:PKU

Volume:59

Issue:1

Page Number:14-19

ISSN No.:1000-8608

Key Words:光电催化;SnO2;Si;保护层

Abstract:通过化学气相沉积法,在清洁的n型Si表面制备SnO2薄膜作为保护层,得到SnO2-Si光电极.采用TEM、SEM、XRD、XPS、DRS等对其进行表征,研究了其在模拟太阳光下光催化降解苯酚的性能.在不同沉积温度下得到的样品中,400℃沉积得到的样品结晶度相对最高.SnO2层厚度为230nm时SnO2-Si光电极光电流响应最强,且分解水起始电位较正,用于降解污染物时可避免分解水副反应的发生.在中性、酸性、碱性电解质溶液中,其循环伏安曲线衰减均不明显,证明SnO2-Si光电极具有稳定的光电化学性能.在可见光光电催化条件下,偏压为1.8V时,其苯酚的去除率达到100%,TOC去除率达到21%.

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