Indexed by:期刊论文
Date of Publication:2017-06-01
Journal:MATERIALS RESEARCH EXPRESS
Included Journals:SCIE
Volume:4
Issue:6
ISSN No.:2053-1591
Key Words:silicon wafer; residual stress; strain energy; FEM
Abstract:A thin subsurface damage layer is often formed in the ground layer of a silicon wafer. Compressive stresses exist in the damage layer of the wafer and cause the wafer to deflect when it is unloaded from the vacuum chuck. The residual stresses play an important role in evaluating the machining quality of a wafer. A concise yet accurate stress-deflection relationship is desired so that the residual stresses can be calculated from the wafer deflection. The theoretical equation based on minimizing the total strain energy is often used. However, the anisotropic effects of silicon are neglected and would incur errors when it is applied on silicon wafers. This study establishes an empirical equation via a finite element (FE) model. Both equations are verified in experiments. It is found that FE model is more accurate than the theoretical equation.
Professor
Supervisor of Doctorate Candidates
Supervisor of Master's Candidates
Title : 国际磨粒技术学会（International Committee of Abrasive Technology, ICAT）委员，中国机械工程学会极端制造分会副主任、生产工程分会常务委员、微纳米制造技术分会常务委员，中国机械工程学会生产工程分会磨粒加工技术专业委员会副主任、切削加工专业委员会常委委员、精密工程与微纳技术专业委员会常委委员，中国机械工程学会特种加工分会超声加工技术委员会副主任，中国机械工程学会摩擦学分会微纳制造摩擦学专业委员会常务委员，中国机械工业金属切削刀具协会切削先进制造技术研究会常务理事、对外学术交流工作委员会副主任、切削先进制造技术研究会自动化加工技术与系统委员会副主任。
Gender:Male
Alma Mater:西北工业大学
Degree:Doctoral Degree
School/Department:机械工程学院
Discipline:Mechanical Manufacture and Automation. Mechatronic Engineering. Manufacturing Engineering of Aerospace Vehicle
Business Address:机械工程学院7191
Open time:..
The Last Update Time:..
