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Indexed by:期刊论文

Date of Publication:2017-06-01

Journal:MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING

Included Journals:SCIE、EI

Volume:63

Page Number:97-106

ISSN No.:1369-8001

Key Words:Silicon wafer; Chemo-mechanical grinding; Soft abrasive; Surface finish; Subsurface damage

Abstract:A new soft abrasive grinding wheel (SAGW) used in chemo-mechanical grinding (CMG) was developed for machining silicon wafers. The wheel consisted of magnesia (MgO) soft abrasives, calcium carbonate (CaCO3) additives and magnesium oxychloride bond. Surface topography, roughness and subsurface damage of the silicon wafers ground using the new SAGW were comprehensively investigated. The results showed that the grinding with the new SAGW produced a surface roughness of about 0.5 nm in R-a and a subsurface damage layer of about 10 nm in thickness, which is comparable to that produced by chemo-mechanical polishing. This study also revealed that the chemical reactions between MgO abrasive, CaCO3 additives and silicon material did occur during grinding, thereby generating a soft reactant layer on the ground surface. The reactant layer was easily removed during the grinding process.