Indexed by:期刊论文

Date of Publication:2008-10-01

Journal:SEMICONDUCTOR SCIENCE AND TECHNOLOGY

Included Journals:SCIE、EI、Scopus

Volume:23

Issue:10

ISSN No.:0268-1242

Abstract:(1 1 1), (1 1 0) Cd(0.96)Zn(0.04)Te and (1 1 1) Cd(0.9)Zn(0.1)Te semiconductor wafers grown by the modified vertical Bridgman method with dimensions of 10 mm x 10 mm x 2.5 mm were lapped with a 2-5 mu m polygonal Al(2)O(3) powder solution, and then chemically mechanically polished by an acid solution having nanoparticles with a diameter of around 5 nm, corresponding to the surface roughnesses Ra of 2.135 nm, 1.968 nm and 1.856 nm. The hardness and elastic modulus of (1 1 1), (1 1 0) Cd0.96Zn0.04Te and (1 1 1) Cd0.9Zn0.1Te single crystals are 1.21 GPa, 42.5 GPa; 1.02 GPa, 44.0 GPa; and 1.19 GPa, 43.4 GPa, respectively. After nanocutting is performed by the Berkovich nanoindenter, the surface roughness Ra of the (1 1 1) Cd0.9Zn0.1Te single crystal attains a 0.215 nm ultra-smooth surface. The hardness and elastic modulus of three kinds of CdZnTe single crystals decrease with the increase of indentation load. When the nanoindenter departs the surface of the crystals, the adherence effects are obvious for the three kinds of single crystals. This is attributed to the plastic sticking behavior of CdZnTe material at a nanoscale level. When the indentation load of the three kinds of CdZnTe single crystals is in the range of 4000-12 000 mu N, the adhered CdZnTe material on the nanoindenter falls onto the surface and accumulates around the nanoindentation.