个人信息Personal Information
教授
博士生导师
硕士生导师
性别:男
毕业院校:大连理工大学
学位:博士
所在单位:材料科学与工程学院
办公地点:材料馆332
联系方式:15641188312
电子邮箱:htma@dlut.edu.cn
Growth mechanism of Cu3Sn grains in the (111)Cu/Sn/Cu micro interconnects
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论文类型:会议论文
发表时间:2018-01-01
收录刊物:CPCI-S
页面范围:1748-1750
关键字:electronic packaging; soldering; intermetallic compound; grain orientation; temperature gradient; anisotropy
摘要:The anisotropic properties of micro solder interconnects in physical and mechanical behaviors have been deemed as a severe reliability concern. In the present work, the morphology and orientation characteristic of Cu3Sn grains in the (111)Cu/Sn/Cu solder interconnects was investigated. After soldering for 500 min under a temperature gradient of 150 degrees C/cm, a full IMC (Cu/Cu3Sn/Cu6Sn5/Cu3Sn/Cu) interconnect was fabricated. The thicknesses of the Cu3Sn layers at the cold end and hot end were comparatively. However, the asymmetrical morphology of Cu3Sn layers and asymmetrical formation of Kirkendall voids between the cold and hot ends were observed. The probable reason might be attributed to the morphology and orientation of the Cu3Sn grains. The Cu3Sn grains exhibited a preferred orientation. The growth mechanisms of the Cu3Sn and Kirkendall voids were discussed.