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论文类型：期刊论文

发表时间：2020-04-15

发表刊物：MATERIALS LETTERS

收录刊物：EI、SCIE

卷号：265

ISSN号：0167-577X

关键字：Cu6Sn5; Crystal growth; Interfaces; EBSD; 3D packaging

摘要：Fully oriented-intermetallic interconnects (FOI) of high melting point and service performance have highly considerable potential application in the current generation of 3D electronic packaging. The primary process of fabrication of this structure is the Cu6Sn5 preferred nucleation. In this article, the orientations of 59 successive Cu6S5 grains along the radius of (0 0 1)Cu/Sn-3.0Ag solder interface were investigated. Finally, an analysis and control model of Cu6Sn5 preferred nucleation determined by chemical potential gradient of Cu migration was established and applied to address and manage the orientation growth of Cu6Sn5 under different reflow temperatures and solder compositions. The results pave the way for orientation controlling of interfacial intermetallics in 3D packaging technologies. (C) 2020 Elsevier B.V. All rights reserved.