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Paper Publications

[301]赵涧泽, 孙景昌, 梁红伟, 冯秋菊, 边继明, 胡礼中, 张贺秋, 赵子文, 杜同国.脉冲激光沉积法在p型GaAs衬底上制备ZnO同质结发光二极管[A],2008,408-411
[302]杜国同, 付艳萍, 马艳, 李香萍, 夏小川, 赵旺, 张源涛, 董鑫, 张宝林, 孙景昌, 赵涧泽, 梁红伟, 边继明.ZnO基p-n结的制备及其电注入发光研究[A],2008,387-390
[303]Zhao, J. Z., Du, G. T., Liang, H. W., Sun, J. C., Bian, J. M., Feng, Q. J., Hu, L. Z., Zhang, H. Q., X. P., Luo, Y. M., HW (reprint author), Dalian Univ Technol, State Key Lab Mat Modificat Laser Ion Electron Be, Dalian 116024, Peoples R China..Electroluminescence from n-ZnO/p-ZnO : Sb homojunction light emitting diode on sapphire substra...[J],JOURNAL OF PHYSICS D-APPLIED PHYSICS,2008,41(19)
[304]Sun, Jingchang, Du, Guotong, Liang, Hongwei, Zhao, Jianze, Feng, Qiuju, Bian, Jiming, Ziwen, Zhang, Heqiu, Luo, Yingmin, Hu, Lizhong, HW (reprint author), Dalian Univ Technol, State Key Lab Mat Modificat Laser Ion Elect Beams, Dalian 116024, Peoples R China..Annealing effects on electrical and optical properties of ZnO films deposited on GaAs by metal ...[J],APPLIED SURFACE SCIENCE,2008,254(22):7482-7485
[305]Wang Jing-Wei, Bian Ji-Ming, Liang Hong-Wei, Sun Jing-Chang, Zhao Jian-Ze, Hu Li-Zhong, Luo Ying-Min, Du Guo-Tong, Bian, JM (reprint author), Dalian Univ Technol, Sch Phys & Optoelect Technol, Dalian 116024, Peoples R China..Enhanced p-type ZnO films through nitrogen and argentum codoping grown by ultrasonic spray pyro...[J],CHINESE PHYSICS LETTERS,2008,25(9):3400-3402
[306]Yang, Tianpeng, Bian, Jiming, Liang, Hongwei, Sun, Jingchang, Wang, Xinsheng, Liu, Weifeng, Chang, Yuchun, Du, Guotong, JM (reprint author), Dalian Univ Technol, Sch Phys & Optoelect Technol, Dalian 116024, Peoples R China..High quality p-type ZnO films grown by low pressure plasma-assisted MOCVD with N2O rf plasma do...[J],JOURNAL OF MATERIALS PROCESSING TECHNOLOGY,2008,204(1-3):481-485
[307]Wang Jing-Wei, 边继明, Sun Jing-Chang, 梁红伟, Zhao Jian-Ze, 杜国同, Bian, JM (reprint author), Dalian Univ Technol, Sch Phys & Optoelect Technol, State Key Lab Mat Modificat Laser Ion & Electron, Dalian 116024, Peoples R China..Ag掺杂P型ZnO薄膜及其光电性能研究[J],物理学报,2008,57(8):5212-5216
[308]Sun, J. C., Du, G. T., Liang, H. W., Zhao, J. Z., Bian, J. M., Feng, Q. J., Hu, L. Z., Zhang, H. Q., X. P., Luo, Y. M., HW (reprint author), Dalian Univ Technol, Sch Phys & Optoelectron Technol, State Key Lab Mat Modificat Laser Ion Electron Be, Dalian 116024, Peoples R China..Ultraviolet electroluminescence from n-ZnO : Ga/p-ZnO : N homojunction device on sapphire subst...[J],CHEMICAL PHYSICS LETTERS,2008,460(4-6):548-551
[309]王经纬, 边继明, 梁红伟, 孙景昌, 赵涧泽, 杜国同.Ag掺杂对ZnO薄膜的光电性能影响[J],发光学报,2008,29(3):460-464
[310]Liang, H. W., Luo, Y. M., Du, G. T., Feng, Q. J., Sun, J. C., Zhao, J. Z., Bian, J. M., Hu, L. Z., Zhang, H. Q., HW (reprint author), Dalian Univ Technol, Laser Ion Elect Beams & Sch Phys, State Key Lab Mat Modificat, Dalian 116024, Peoples R China..Room temperature electroluminescence from the ZnO homojunction grown on an n(+)-Si substrate by...[J],SEMICONDUCTOR SCIENCE AND TECHNOLOGY,2008,23(2)

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