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电子束束流密度对冶金硅中杂质磷的影响

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Date of Publication:2010-01-01

Journal:材料工程

Affiliation of Author(s):材料科学与工程学院

Issue:3

Page Number:18-21

ISSN No.:1001-4381

Abstract:In order to evaluate the effect of dephosphorization in silicon during melting and solidification,three-group electron beam melting experiments with the same melting power but different time for extinguishing beam density were carried out. According to the distribution of the phosphorus content in the obtained ingot, the formulas for the estimation of the phosphorus content in silicon is developed and the removal rate of phosphorus is calculated to be over 80%. Phosphorus in silicon could be effectively removed by evaporation when the beam density is over 235mA.

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