Hits:

Indexed by:期刊论文

Date of Publication:2022-06-29

Journal:材料工程

Affiliation of Author(s):材料科学与工程学院

Issue:3

Page Number:70-73

ISSN No.:1001-4381

Abstract:Porous silicon gettering was an effective method for reducing impurities and defects in crystalline silicon and improving conversion efficiency of solar cell.Porous silicon layer was prepared on the surface of monocrystalline silicon by electrochemical etching. The characterizations of porous silicon layer were investigated and the effect on the porous silicon gettering of current density. Moreover, the gettering mechanism was supposed based on the microstructure of porous silicon. The result showed that the porosity increased significantly as the current density increasing and the maximum values are achieved for the current density 100 mA/cm2. The porous silicon layer formation was accompanied by the appearance of elastic mechanical stress and the increasing of lattice parameters. The two factors were beneficial to the migration for defects and metallic impurities from the bulk to the PS layer. Therefore, the resistivity increased with the current density increasing.

Note:新增回溯数据