谭毅Yi Tan

教授

 博士生导师  硕士生导师
学位:博士
性别:男
毕业院校:东京工业大学
所在单位:材料科学与工程学院
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电子束束流密度对冶金硅中杂质磷的影响

发布时间:2022-06-19 点击次数:

发表刊物:材料工程
所属单位:材料科学与工程学院
期号:3
页面范围:18-21
ISSN号:1001-4381
摘要:In order to evaluate the effect of dephosphorization in silicon during melting and solidification,three-group electron beam melting experiments with the same melting power but different time for extinguishing beam density were carried out. According to the distribution of the phosphorus content in the obtained ingot, the formulas for the estimation of the phosphorus content in silicon is developed and the removal rate of phosphorus is calculated to be over 80%. Phosphorus in silicon could be effectively removed by evaporation when the beam density is over 235mA.
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