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Indexed by:期刊论文

Date of Publication:2011-06-01

Journal:Gongneng Cailiao/Journal of Functional Materials

Included Journals:EI、PKU、ISTIC、Scopus

Volume:42

Issue:SUPPL. JUNE

Page Number:536-540

ISSN No.:10019731

Abstract:Using reactive RF magnetron sputtering, Zn1-xMnxO (0  x  0.25) thin films were deposited on Si(001) substrate and were annealed at different temperatures. The microstructural, surface morphological and optical properties of Zn1-xMnxO thin films were characterized by using X-ray diffraction (XRD), atomic force microscopy (AFM), transmission electron microscopy (TEM) and transmittance spectroscopy. The results indicated that all the films are strongly oriented along (002) orientation corresponding to the hexagonal wurtzite structure. The ZnMnO film at concentration x  0.07 of Mn is of high quality, uniform, and free of clustering/segregated phases. However, at x  0.13, ZnMnO3 (tetragonal) is observed as the secondary phase. For Zn1-xMnxO (x  0.07) thin films the optical band gap is found to be 3.17 eV for as-deposited and 3.27 eV for annealed at a high temperature. The as-deposited film is in a state of compressive stress and the stress can be largely relieved with annealing temperature of above 700  C.