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Indexed by:期刊论文

Date of Publication:2006-10-30

Journal:APPLIED PHYSICS LETTERS

Included Journals:SCIE、EI

Volume:89

Issue:18

ISSN No.:0003-6951

Abstract:Zn1-xCdxO films (0 <= x <= 0.179) were grown on Si (001) substrates at 750 degrees C with a radio-frequency reactive magnetron sputtering method. Difference between the photoluminescence (PL) spectra taken at room temperature (RT) and at 12 K is reported and is deduced to be the result of PL emission from the ZnCdO phases with wurtzite and zinc blende structures. It is also found that the RT PL intensity is in inverse proportion to the carrier concentration in the films. Cd incorporation results in the transform of conductivity from p type to n type and a decrease of carrier mobility. (c) 2006 American Institute of Physics.