location: Current position: Home >> Scientific Research >> Paper Publications

Optical and electrical properties of Zn1-xCdxO films grown on Si substrates by reactive radio-frequency magnetron sputtering

Hits:

Indexed by:期刊论文

Date of Publication:2006-10-30

Journal:APPLIED PHYSICS LETTERS

Included Journals:SCIE、EI

Volume:89

Issue:18

ISSN No.:0003-6951

Abstract:Zn1-xCdxO films (0 <= x <= 0.179) were grown on Si (001) substrates at 750 degrees C with a radio-frequency reactive magnetron sputtering method. Difference between the photoluminescence (PL) spectra taken at room temperature (RT) and at 12 K is reported and is deduced to be the result of PL emission from the ZnCdO phases with wurtzite and zinc blende structures. It is also found that the RT PL intensity is in inverse proportion to the carrier concentration in the films. Cd incorporation results in the transform of conductivity from p type to n type and a decrease of carrier mobility. (c) 2006 American Institute of Physics.

Pre One:Si(001)基片上反应射频磁控溅射ZnO薄膜的两步生长方法

Next One:沉积温度对ZrO_2薄膜结构及表面形貌的影响