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    段玉平

    • 教授     博士生导师 硕士生导师
    • 主要任职:国际教育学院院长、直属党支部书记、留学生办公室主任
    • 其他任职:辽宁省凝固控制与数字化制备技术重点实验室副主任
    • 性别:男
    • 毕业院校:大连理工大学
    • 学位:博士
    • 所在单位:材料科学与工程学院
    • 学科:材料加工工程
    • 办公地点:铸造中心213
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    Growth behavior of Cu/Al intermetallic compounds in hot-dip aluminized copper

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      发布时间:2019-03-09

      论文类型:期刊论文

      发表时间:2009-05-01

      发表刊物:SURFACE AND INTERFACE ANALYSIS

      收录刊物:Scopus、EI、SCIE

      卷号:41

      期号:5

      页面范围:361-365

      ISSN号:0142-2421

      关键字:hot-dip aluminized copper; plating auxiliary; intermetallic layer; reaction equation; diffusion rate of copper

      摘要:Hot-dipped aluminum copper with plating auxiliary KF is introduced in this work. In this study, the intermetallic layer thickness varies with dipping temperature and time in a linear relationship. The main phases are identified to be CuAl(2) and K(3)AlF(6) by means of X-ray diffraction. The reaction equations are deduced according to the elements concentration gradient in cross section. The copper diffusion rate in liquid Al is calculated to be 1.13 x 10(-12) m(2)/s by Fick's second law in semi-infinite solid model, and the obtained conductivity is 1.758-1.767 x 10(-2) Omega mm(2)/m. The results indicate that the interfacial bonding is in a good state and plating auxiliary KF aqueous solution. can significantly improve the substrate wettability. The appropriate hot-dipping condition for the samples is 953-973 K for 4-8 s. Copyright (C) 2009 John Wiley & Sons, Ltd.