段玉平

  教授   博士生导师   硕士生导师


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Growth behavior of Cu/Al intermetallic compounds in hot-dip aluminized copper

论文类型:期刊论文

发表时间:2009-05-01

发表刊物:SURFACE AND INTERFACE ANALYSIS

收录刊物:SCIE、EI、Scopus

卷号:41

期号:5

页面范围:361-365

ISSN号:0142-2421

关键字:hot-dip aluminized copper; plating auxiliary; intermetallic layer; reaction equation; diffusion rate of copper

摘要:Hot-dipped aluminum copper with plating auxiliary KF is introduced in this work. In this study, the intermetallic layer thickness varies with dipping temperature and time in a linear relationship. The main phases are identified to be CuAl(2) and K(3)AlF(6) by means of X-ray diffraction. The reaction equations are deduced according to the elements concentration gradient in cross section. The copper diffusion rate in liquid Al is calculated to be 1.13 x 10(-12) m(2)/s by Fick's second law in semi-infinite solid model, and the obtained conductivity is 1.758-1.767 x 10(-2) Omega mm(2)/m. The results indicate that the interfacial bonding is in a good state and plating auxiliary KF aqueous solution. can significantly improve the substrate wettability. The appropriate hot-dipping condition for the samples is 953-973 K for 4-8 s. Copyright (C) 2009 John Wiley & Sons, Ltd.

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