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Indexed by:期刊论文

Date of Publication:2011-01-01

Journal:SCRIPTA MATERIALIA

Included Journals:SCIE、EI、Scopus

Volume:64

Issue:2

Page Number:177-180

ISSN No.:1359-6462

Key Words:Transmission electron microscopy (TEM); Semiconductors; Nanocrystalline microstructure; Plastic deformation; Phase transformations

Abstract:Phase transformation of single crystal silicon (Si) was investigated under various grinding conditions using high-resolution transmission electron microscopy. Nanocrystals with sizes ranging from 6 to 20 nm of diamond cubic silicon (Si-I) and high-pressure phase (Si-III) were observed in the grinding-induced amorphous Si layers. The phase transformation pattern was found to be influenced by the thermal status involved in the grinding processes. (C) 2010 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.