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Sb_2Se_3单晶纳米带的水热制备、表征及性能

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Indexed by:期刊论文

Date of Publication:2010-06-15

Journal:稀有金属材料与工程

Included Journals:PKU、ISTIC

Issue:S1

Page Number:1-4

ISSN No.:1002-185X

Key Words:水热法;硒化锑;纳米带;生长机制;性能

Abstract:采用水热法制备大量高长径比的Sb2Se3纳米带。十六烷基三甲基溴化铵(CTAB)作为形貌控制剂在纳米带的形成过程中起了至关重要的作用,借助X射线粉末衍射(XRD)仪、扫描电子显微镜(SEM)、透射电子显微镜(TEM)和高分辨透射电镜(HRTEM)等对所得产物进行系统表征。结果表明,所制备出的Sb2Se3纳米带是沿[001]晶面方向生长的,带的宽度在1μm以内,厚度有100nm左右,长度可达几十个微米。对Sb2Se3纳米带的生长机制和光学性质进行了初步的讨论和研究。

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