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Indexed by:期刊论文

Date of Publication:2011-11-01

Journal:MATERIALS RESEARCH INNOVATIONS

Included Journals:Scopus、SCIE、EI

Volume:15

Issue:6

Page Number:406-409

ISSN No.:1432-8917

Key Words:Electron beam; Phosphorus; Molten silicon; Evaporation coefficient; Solar grade silicon

Abstract:A new method, electron beam candle melting (EBCM), is proposed for the removal of P in molten Si, to produce high quality material such as solar grade silicon for photovoltaic applications. EBCM is designed to overcome the shortcomings of electron beam melting while utilising the high saturated pressure of P in molten Si to effect refining. The experimental result showed that it could remove P from Si effectively; in addition, the energy utilisation ratio was experimentally proved to be high. The evaporation coefficient of P removal is in a reasonable region and comparable with the theoretical value, which indicates that EBCM is a feasible method for the removal of P in molten Si in low power.