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一种高纯硅衬底下电子束熔炼多晶硅的方法及设备

Release Time:2019-03-09  Hits:

First Author: Yi Tan

Disigner of the Invention: 姜大川,董伟,刘振远,石爽,李佳艳,盛之林,刘应宽

Authorization Date: 2011-08-03

Authorization Number: 201110220767.1

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