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高耐压、低损耗的Si衬底Ga2O3 MOSFET器件制备研究

Release Time:2018-05-29  Hits:

Leading Scientist: 柳阳

Project Participants: 夏晓川,梁红伟,申人升

Project Source: 国家自然科学基金项目

Sub-Class of Project: 面上项目

Status: 结题

Supported by: National Natural Science Foundation of China

Nature of Project: 纵向

Project Approval Number: 61774072

Date of Project Approval: 2017-08-17

Scheduled Completion Time: 2021-12-31

Date of Project Initiation: 2022-03-29

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