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Scientific Research
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zhangkexiong, lianghongwei, Song, Shiwei, Yang, Dechao, Shen Rensheng, liuyang, xiaxiaochuan, Luo Yingmin, duguotong.Stress State of GaN Epilayer Grown on Sapphire and 6H-SiC Substrates[J],JOURNAL OF TESTING AND EVALUATION,2022,41(5):798-803
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Cai, Xin, lianghongwei, Liu, Yuanda, Shen Rensheng, xiaxiaochuan, liuyang, Ling, C. C., duguotong.Study of the thermal stability of the H-related donors in high resistivity ZnO:Cu thin films by high-pressure H-2 treatment[J],CHEMICAL PHYSICS LETTERS,2022,579:90-93
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Shen Rensheng, liuyang, zhangxizhen, Lin W., chengchuanhui, Jackie, duguotong, qiliang.Study on sensing properties of a temperature-independent high pressure sensor base on tapered FBG[A],International Symposium on Photonics and Optoelectronics, SOPO 2010,2022
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xiaxiaochuan, lianghongwei, Geng, Xinlei, Chen, Yuanpeng, yangchao, liuyang, Shen Rensheng, Xu, Mengxiang, duguotong.Synthesis of GaN network by nitridation of hexagonal epsilon-Ga2O3 film[J],JOURNAL OF MATERIALS SCIENCE MATERIALS IN ELECTRONICS,2022,28(3):2598-2601
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刘建勋, lianghongwei, xiaxiaochuan, huanghuolin, liuyang, Shen Rensheng, Luo Yingmin, duguotong.含InGaN插入层的非故意掺杂高阻GaN的外延生长和特性研究[A],第一届全国宽禁带半导体学术及应用技术会议,2022,28-29
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Yunjie Ke, zhangkexiong, duguotong, 柯昀洁, lianghongwei, Shen Rensheng, Shiwei Song, 宋世巍, xiaxiaochuan, liuyang.喷淋头高度对InGaN/GaN量子阱生长的影响[A],第十七届全国化合物半导体材料微波器件和光电器件学术会议,2022,65-68
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年产5万片6英寸导电型和半绝缘型碳化硅(SiC)衬底建设项目, 国务院其他部门, 2021/01/01, 在研
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碳化硅基高温集成电路研究, 省、市、自治区科技项目, 2022/07/01, 在研
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高耐压、低损耗的Si衬底Ga2O3 MOSFET器件制备研究, 国家自然科学基金项目, 2017/08/17, 结题
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耐高压硅基氧化镓场效应晶体管的研制, 地市厅局（含县）项目, 2018/01/01-2023/09/13, 结题
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稀土掺杂发光材料温度依赖的发光性质研究, 省、市、自治区科技项目, 2018/08/20-2023/09/13, 结题
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大连集成电路产业升级转型的调查研究, 国际合作项目, 2018/08/22, 结题
