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一种带有InGaN插入层的非故意掺杂高阻GaN薄膜及其制备方法

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First Author:lianghongwei

Disigner of the Invention:刘建勋,liuyang,xiaxiaochuan,duguotong,蒋建华,闫晓密

Affilication of Author(s):微电子学院

Application Number:CN105390532A

Authorization number:CN201510712168.X

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