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一种带有InGaN插入层的非故意掺杂高阻GaN薄膜及其制备方法

Release Time:2022-10-19  Hits:

First Author: 梁红伟

Disigner of the Invention: 刘建勋,柳阳,夏晓川,杜国同,蒋建华,闫晓密

Institution: 微电子学院

Application Number: CN105390532A

Authorization Number: CN201510712168.X

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