Current position: Home >> Scientific Research >> Patents

一种氧化镓外延膜的制备方法及氧化镓外延膜

Hits:

First Author:陈远鹏

Disigner of the Invention:xiaxiaochuan,liuyang,Shen Rensheng,lianghongwei

Application Number:ZL.201310399590.5

Pre One:一种基于SiC衬底的垂直结构GaN基紫外LED及其制备方法

Next One:掺杂氧化镓膜的制备方法及掺杂氧化镓膜
Institutional Repository Personal Page

Address: No.2 Linggong Road, Ganjingzi District, Dalian City, Liaoning Province, P.R.C., 116024

Click : times
  • MOBILE Version
    •
    Open time:..
    The Last Update Time:..

    Mobile phone sweep