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Stress State of GaN Epilayer Grown on Sapphire and 6H-SiC Substrates

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Date of Publication:2022-10-08

Journal:JOURNAL OF TESTING AND EVALUATION

Affiliation of Author(s):微电子学院

Volume:41

Issue:5

Page Number:798-803

ISSN No.:0090-3973

Next One:Study of the thermal stability of the H-related donors in high resistivity ZnO:Cu thin films by high-pressure H-2 treatment
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