location： Current position: Home >> Scientific Research >> Paper Publications

Smooth surface morphology and low dislocation density of p-GaN using indium-assisted growth

Hits:

Date of Publication:2022-10-08

Journal:APPLIED PHYSICS A MATERIALS SCIENCE PROCESSING

Affiliation of Author(s):微电子学院

Volume:116

Issue:4

Page Number:1561-1566

ISSN No.:0947-8396

Pre One:SiN插入层对GaN外延膜应力和光学质量的影响

Next One:Strain and microstructures of GaN epilayers with thick InGaN interlayer grown by MOCVD
Institutional Repository Personal Page

Address: No.2 Linggong Road, Ganjingzi District, Dalian City, Liaoning Province, P.R.C., 116024

Click : times
  • MOBILE Version
    •
    Open time:..
    The Last Update Time:..

    Mobile phone sweep