Release Time:2024-12-06 Hits:
Date of Publication: 2022-10-08
Journal: APPLIED PHYSICS A MATERIALS SCIENCE PROCESSING
Institution: 微电子学院
Volume: 116
Issue: 4
Page Number: 1561-1566
ISSN: 0947-8396
Prev One:SiN插入层对GaN外延膜应力和光学质量的影响
Next One:Strain and microstructures of GaN epilayers with thick InGaN interlayer grown by MOCVD