location： Current position: Home >> Scientific Research >> Paper Publications

A Study of GaN Grown on SiH4 Pre-Treated 6H-SiC Substrates

Hits:

Date of Publication:2022-10-05

Journal:Chinese Physics Letters

Volume:29

Issue:1

ISSN No.:0256-307X

Pre One:A preliminary study of SF6 based inductively coupled plasma etching techniques for beta gallium trioxide thin film

Next One:Band gap broadening and photoluminescence properties investigation in Ga2O3 polycrystal
Institutional Repository Personal Page

Address: No.2 Linggong Road, Ganjingzi District, Dalian City, Liaoning Province, P.R.C., 116024

Click : times
  • MOBILE Version
    •
    Open time:..
    The Last Update Time:..

    Mobile phone sweep