Current position: Home >> Scientific Research >> Paper Publications

A Study of GaN Grown on SiH4 Pre-Treated 6H-SiC Substrates

Release Time:2024-12-06  Hits:

Date of Publication: 2022-10-05

Journal: Chinese Physics Letters

Volume: 29

Issue: 1

ISSN: 0256-307X

Prev One:A preliminary study of SF6 based inductively coupled plasma etching techniques for beta gallium trioxide thin film

Next One:Band gap broadening and photoluminescence properties investigation in Ga2O3 polycrystal