The influence of reactor height adjustment on properties in GaN films grown on 6H-SiC by metal organic chemical vapor deposition
Release Time:2024-12-06 Hits:
Date of Publication: 2022-10-03
Journal: JOURNAL OF MATERIALS SCIENCE MATERIALS IN ELECTRONICS
Institution: 光电工程与仪器科学学院
Volume: 25
Issue: 10
Page Number: 4268-4272
ISSN: 0957-4522