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The influence of reactor height adjustment on properties in GaN films grown on 6H-SiC by metal organic chemical vapor deposition

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Date of Publication:2022-10-03

Journal:JOURNAL OF MATERIALS SCIENCE MATERIALS IN ELECTRONICS

Affiliation of Author(s):光电工程与仪器科学学院

Volume:25

Issue:10

Page Number:4268-4272

ISSN No.:0957-4522

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