Release Time:2019-03-09  Hits:

Indexed by: Journal Article

Date of Publication: 2014-09-01

Journal: APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING

Included Journals: Scopus、EI、SCIE

Volume: 116

Issue: 4

Page Number: 1561-1566

ISSN: 0947-8396

Abstract: Mg-doped, 1-mu m-thick, p-type GaN films were grown by metal-organic chemical vapor deposition using indium-assisted method. The influence of flow rate ratio of indium to magnesium (In/Mg ratio) on the quality of p-GaN thin films was investigated by atomic force microscope, X-ray diffraction, Hall measurement and secondary ion mass spectroscopy. The surface roughness, crystalline quality and hole concentrations of p-GaN present a different variation tendency below and above 0.183 In/Mg ratio. The evolution process of indium-adlayer model considering adsorption, desorption and the transformation of indium mono-adlayer was proposed to explain the above phenomenon. Indium-assisted growth method can improve surface smoothness and crystalline quality of p-GaN effectively without affecting its electrical properties.