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Indexed by:期刊论文

Date of Publication:2012-12-01

Journal:APPLIED PHYSICS B-LASERS AND OPTICS

Included Journals:Scopus、SCIE、EI

Volume:109

Issue:4

Page Number:605-609

ISSN No.:0946-2171

Abstract:N-ZnO/Ga2O3/p-GaN heterojunction light-emitting diode (LED) was fabricated by metal-organic chemical vapor deposition. Compared with the n-ZnO/p-GaN structure, the deep level visible emission at 525 nm was completely suppressed while UV emission at similar to 392 nm was significantly improved in ZnO/Ga2O3/p-GaN structure. The role of Ga2O3 in n-ZnO/Ga2O3/p-GaN heterojunction LED was discussed in detail.