Release Time:2019-03-09  Hits:

Indexed by: Journal Article

Date of Publication: 2012-12-01

Journal: APPLIED PHYSICS B-LASERS AND OPTICS

Included Journals: EI、SCIE、Scopus

Volume: 109

Issue: 4

Page Number: 605-609

ISSN: 0946-2171

Abstract: N-ZnO/Ga2O3/p-GaN heterojunction light-emitting diode (LED) was fabricated by metal-organic chemical vapor deposition. Compared with the n-ZnO/p-GaN structure, the deep level visible emission at 525 nm was completely suppressed while UV emission at similar to 392 nm was significantly improved in ZnO/Ga2O3/p-GaN structure. The role of Ga2O3 in n-ZnO/Ga2O3/p-GaN heterojunction LED was discussed in detail.