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[41]Yang, Dechao, Liang, Hongwei, Qiu, Yu, Song, Shiwei, Liu, Yang, Shen, Rensheng, Luo, Yingmin, Du, Guotong, HW (reprint author), Dalian Univ Technol, Sch Phys & Optoelect Technol, Dalian 116024, Peoples R China..Improvement of the quality of GaN epilayer by combining a SiNx interlayer and changed GaN growt...[J],JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS,2013,24(8):2716-2720
[42]Cheng, Yi, Zhang, Zhenzhong, Liu, Yang, Song, Shiwei, Yuanda, Wang, Bo, Xia, Xiaochuan, Shen, Rensheng, Liang, Hongwei, Du, Guotong, HW (reprint author), Dalian Univ Technol, Sch Phys & Optoelect Engn, Dalian 116024, Peoples R China..Band gap broadening and photoluminescence properties investigation in Ga2O3 polycrystal[J],JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS,2013,24(8):2750-2754
[43]Song, Shiwei, Liu, Yang, Liang, Hongwei, Yang, Dechao, Zhang, Kexiong, Xia, Xiaochuan, Shen, Rensheng, Du, Guotong, SW (reprint author), Dalian Univ Technol, Sch Phys & Optoelect Technol, Dalian 116024, Peoples R China..Improvement of quality and strain relaxation of GaN epilayer grown on SiC substrate by in situ ...[J],JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS,2013,24(8):2923-2927
[44]Cai, Xin, Liang, Hongwei, Liu, Yuanda, Shen, Rensheng, Xia, Xiaochuan, Yang, Ling, C. C., Du, Guotong, HW (reprint author), Dalian Univ Technol, Sch Phys & Optoelect Technol, Dalian 116024, Peoples R China..Study of the thermal stability of the H-related donors in high resistivity ZnO:Cu thin films by...[J],CHEMICAL PHYSICS LETTERS,2013,579:90-93
[45]宋世巍, 梁红伟, 夏小川, 张克雄, 杨德超, 杜国同, 柳阳, Liang, H.-W.(hwliang@dlut.edu.cn).低温插入层对绿光LED的发光影响[J],发光学报,2013,34(6):744-747
[46]柯昀洁, 梁红伟, 申人升, 宋世巍, 夏晓川, 柳阳, 张克雄, 杜国同, Liang, H.-W.(hwliang@dlut.edu.cn).喷淋头高度对InGaN/GaN量子阱生长的影响[J],发光学报,2013,34(4):469-473
[47]杨德超, 梁红伟, 邱宇, 宋世巍, 申人升, 柳阳, 夏晓川, 俞振南, 杜国同, Liang, H.-W.(hwliang@dlut.edu.cn).衬底弯曲度对GaN基LED芯片性能的影响[J],发光学报,2013,34(3):340-344
[48]Zhang, Hezhi, Shen, Rensheng, Liang, Hongwei, Liu, Yuanda, Yang, Xia, Xiaochuan, Du, Guotong, HW (reprint author), Dalian Univ Technol, Sch Phys & Optoelect Technol, Dalian 116024, Peoples R China..n-ZnO/p-GaN heterojunction light-emitting diodes with a polarization-induced graded-p-AlxGa1-xN...[J],JOURNAL OF PHYSICS D-APPLIED PHYSICS,2013,46(6)
[49]梁红伟, 申人升, 柳阳, 夏晓川.Fabrication of High-performance 400 nm Violet Light Emitting Diode[J],CHINESE JOURNAL OF LUMINESCENCE（发光学报）,2013,34(2):225-229
[50]Liu, Yuanda, Liang, Hongwei, Xia, Xiaochuan, Shen, Rensheng, Yang, Bian, Jiming, Du, Guotong, HW (reprint author), Dalian Univ Technol, Sch Phys & Optoelect Technol, Dalian 116024, Peoples R China..Introducing Ga2O3 thin films as novel electron blocking layer to ZnO/p-GaN heterojunction LED[J],APPLIED PHYSICS B-LASERS AND OPTICS,2012,109(4):605-609

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