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在镓系异质半导体衬底上制备氧化镓膜的方法及氧化镓膜

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First Author:xiaxiaochuan

Disigner of the Invention:liuyang,Shen Rensheng,lianghongwei,hulizhong

Affilication of Author(s):微电子学院

Application Number:ZL.201310401102.X

Next One:掺杂氧化镓膜的制备方法及掺杂氧化镓膜
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