Current position: Home >> Scientific Research >> Patents

在镓系异质半导体衬底上制备氧化镓膜的方法及氧化镓膜

Release Time:2022-10-19  Hits:

First Author: 夏晓川

Disigner of the Invention: 柳阳,申人升,梁红伟,胡礼中

Institution: 微电子学院

Application Number: ZL.201310401102.X

Prev One:空穴导电特性氧化镓膜的制备方法及空穴导电特性氧化镓膜

Next One:掺杂氧化镓膜的制备方法及掺杂氧化镓膜
Institutional Repository Personal Page

Address: No.2 Linggong Road, Ganjingzi District, Dalian City, Liaoning Province, P.R.C., 116024

Click:Times MOBILE Version
The Founding Time : ..
The Last Update Time : ..

Browse on mobile