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空穴导电特性氧化镓膜的制备方法及空穴导电特性氧化镓膜

Release Time:2022-10-20  Hits:

First Author: 梁红伟

Disigner of the Invention: 夏晓川,柳阳,申人升,杜国同,胡礼中

Institution: 微电子学院

Application Number: CN103469173A

Authorization Number: CN201310414275.5

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