标题：
Characteristics of doping controllable ZnO films grown by photo-assisted metal organic chemical vapor deposition
点击次数：
论文类型：
期刊论文
发表刊物：
OPTICAL MATERIALS EXPRESS
收录刊物：
SCIE、EI、Scopus
卷号：
7
期号：
4
页面范围：
1281-1288
ISSN号：
2159-3930
摘要：
Arsenic doped p-type ZnO films are prepared by the photo-assisted metal organic chemical vapor deposition method. Using the photo-assisted technique, the acceptor activation process is simplified. The arsenic doping level, which decides the carrier distribution, could be controlled by changing the thickness of the pre-deposited GaAs layer. The crystal and optical quality of the ZnO films is good. The acceptor is As-Zn-2V(Zn). Its ionization energy could be slightly reduced by increasing the arsenic doping level. This finding is very helpful to improve the hole concentration. Our experiments provide a new method to grow high performance p-type ZnO based photoelectric devices. (C) 2017 Optical Society of America
发表时间：
2017-04-01
学位：博士
职称：副教授
学科：微电子学与固体电子学
所在单位：集成电路学院