标题：
Hexagonal phase-pure wide band gap epsilon-Ga2O3 films grown on 6H-SiC substrates by metal organic chemical vapor deposition
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论文类型：
期刊论文
发表刊物：
APPLIED PHYSICS LETTERS
收录刊物：
SCIE、EI
卷号：
108
期号：
20
ISSN号：
0003-6951
摘要：
In this paper, hexagonal structure phase-pure wide-band gap epsilon-Ga2O3 films were grown by metal organic chemical vapor deposition on 6H-SiC substrates. The epsilon-Ga2O3 films with good crystal quality were verified by high-resolution X-ray diffraction. The out-of-plane epitaxial relationship between epsilon-Ga2O3 films and 6H-SiC substrates is confirmed to be epsilon-Ga2O3 (0001)//6H-SiC (0001), and the in-plane epitaxial relationship is also confirmed to be epsilon-Ga2O3 < 11 (2) over bar0 >//6H-SiC < 11 (2) over bar0 >. The SEM and AFM images show that the epsilon-Ga2O3 films are uniform and flat. The epsilon-Ga2O3 films are thermally stable up to approximately 800 degrees C and begin to transform into beta-phase Ga2O3 at 850 degrees C. Then, they are completely converted to beta-Ga2O3 films under 900 degrees C. The high-quality epsilon-Ga2O3 films with hexagonal structure have potential application in the optoelectronic field. Published by AIP Publishing.
发表时间：
2016-05-16
学位：博士
职称：副教授
学科：微电子学与固体电子学
所在单位：集成电路学院