夏晓川
  • 学位:博士
  • 职称:副教授
  • 学科:微电子学与固体电子学
  • 所在单位:集成电路学院
教师拼音名称:xiaxiaochuan
硕士生导师
博士生导师
主要任职:集成电路学院副院长
其他任职:副院长
性别:
毕业院校:吉林大学
所在单位:集成电路学院
办公地点:大连理工大学开发区校区信息楼211室
联系方式:0411-84707865
电子邮箱:xiaochuan@dlut.edu.cn
当前位置: 中文主页 >> 科学研究 >> 论文成果
标题:
Influence of Sb valency on the conductivity type of Sb-doped ZnO
点击次数:
论文类型:
期刊论文
发表刊物:
THIN SOLID FILMS
收录刊物:
SCIE、EI
卷号:
589
页面范围:
199-202
ISSN号:
0040-6090
关键字:
Antimony; Metal organic chemical vapor deposition; p-Type zinc oxide; X-ray photoelectron spectroscopy
摘要:
Sb-doped ZnO thin films with different Sb concentrations were grown by varying mole ratio of Sb precursor to Zn precursor during the growth process using metal organic chemical vapor deposition technology. It was found that the valency of Sb changed from Sb3+ to Sb5+ in Sb doped ZnO with increasing mole ratio of Sb precursor to Zn precursor. The p-type ZnO was obtained only for ZnO films with lower mole ratio of Sb precursor. The conductivity type of Sb doped ZnO was changed from p-type to n-type accordingly. These results were suggested that the valency of Sb in ZnO is more important for obtaining p-type Sb doped ZnO thin films. (C) 2015 Published by Elsevier B.V.
发表时间:
2015-08-31
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