Introducing Ga2O3 thin films as novel electron blocking layer to ZnO/p-GaN heterojunction LED
点击次数：
发布时间：
2019-03-09
论文名称：
Introducing Ga2O3 thin films as novel electron blocking layer to ZnO/p-GaN heterojunction LED
论文类型：
期刊论文
发表时间：
2012-12-01
发表刊物：
APPLIED PHYSICS B-LASERS AND OPTICS
收录刊物：
EI、SCIE、Scopus
卷号：
109
期号：
4
页面范围：
605-609
ISSN号：
0946-2171
摘要：
N-ZnO/Ga2O3/p-GaN heterojunction light-emitting diode (LED) was fabricated by metal-organic chemical vapor deposition. Compared with the n-ZnO/p-GaN structure, the deep level visible emission at 525 nm was completely suppressed while UV emission at similar to 392 nm was significantly improved in ZnO/Ga2O3/p-GaN structure. The role of Ga2O3 in n-ZnO/Ga2O3/p-GaN heterojunction LED was discussed in detail.
学位：博士
职称：副教授
学科： 微电子学与固体电子学
所在单位：集成电路学院