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论文类型： 期刊论文

发表时间： 2017-01-01

发表刊物： RSC ADVANCES

收录刊物： SCIE、EI

卷号： 7

期号： 80

页面范围： 50781-50785

ISSN号： 2046-2069

摘要： Simultaneous growth of different kinds of aligned GaN nanostructures (i.e., nanowires, needles, pyramids and micro-rods) on a single substrate was firstly realized at a low temperature of 790 degrees C by naturally changing the III/V ratio across the substrate via a coaxial pipeline configuration. The effects of substrate distance and growth pressure on nanostructure growth were investigated. The morphology variation from nanowires to micros-rods would be explained in terms of Ga species changing from the Ga element to GaN molecule in a hot-wall reactor. This work is helpful for on chip integration of different kinds of nanodevices on unusual substrates of low melting temperature.