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发布时间：2019-03-11

论文类型：期刊论文

发表时间：2017-01-01

发表刊物：RSC ADVANCES

收录刊物：EI、SCIE

卷号：7

期号：80

页面范围：50781-50785

ISSN号：2046-2069

摘要：Simultaneous growth of different kinds of aligned GaN nanostructures (i.e., nanowires, needles, pyramids and micro-rods) on a single substrate was firstly realized at a low temperature of 790 degrees C by naturally changing the III/V ratio across the substrate via a coaxial pipeline configuration. The effects of substrate distance and growth pressure on nanostructure growth were investigated. The morphology variation from nanowires to micros-rods would be explained in terms of Ga species changing from the Ga element to GaN molecule in a hot-wall reactor. This work is helpful for on chip integration of different kinds of nanodevices on unusual substrates of low melting temperature.