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发布时间：2019-03-12

论文类型：期刊论文

发表时间：2016-12-01

发表刊物：CRYSTAL RESEARCH AND TECHNOLOGY

收录刊物：Scopus、EI、SCIE

卷号：51

期号：12

页面范围：757-761

ISSN号：0232-1300

关键字：Au; Ni catalyst; GaN; nanowires; V; III flow ratio

摘要：GaN nanowires (NWs) were grown on GaN(0001) coated sapphire substrate with Ni/Au catalyst by using metalorganic chemical vapor deposition. Nucleation conditions were investigated for improving the growth orientation of NWs. With decreasing catalyst thickness from 5nm/5nm to 2nm/2nm, the NW orientation was improved and the NW morphology was changed from taper to cylindrical, due to the varying of growth mode. Vertical alignment of NWs can be further improved by inserting an additional high-temperature (850 ?) nucleation step with an optimum V/III flow ratio of 20.