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论文类型： 期刊论文

发表时间： 2013-06-21

发表刊物： NANOTECHNOLOGY

收录刊物： SCIE、EI、PubMed、Scopus

卷号： 24

期号： 24

页面范围： 245306

ISSN号： 0957-4484

摘要： InAs/InP core/shell nanowires with different shell thicknesses were grown by a two-step method, and large-scale assembly of single nanowire was realized by using dielectrophoresis alignment and patterned grooves. Thousands of single nanowire field-effect transistors were fabricated on a single chip. The effect of InP shell thickness on the electron mobility and density of InAs nanowires are experimentally investigated and discussed.