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论文类型： 期刊论文

发表时间： 2013-03-21

发表刊物： JOURNAL OF APPLIED PHYSICS

收录刊物： SCIE、EI

卷号： 113

期号： 11

ISSN号： 0021-8979

摘要： Various surface morphologies of hierarchical GaAs/InAs core/shell heterostructure were obtained by carefully tuning the growth parameters. The growth of the InAs shell around the surface of the GaAs core could be evolved from 2D mode to 3D mode as the variation of the growth parameters. As a consequence, the morphology of the InAs shell can systematically change from the uniformly coated cylindrical to isolated islands and eventually nanorings. The isolated nanoring structure can be formed innovatively by coalescence of the islands without the assistance of twin-induced concave sites. Different types of dislocations in the shell structure, which could result from the different behaviors of misfit-stress relaxation processes, were observed during these two growth modes. The mechanisms of the morphological evolution are also discussed in detail. (C) 2013 American Institute of Physics. [http://dx.doi.org/10.1063/1.4795503]