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发布时间：2019-03-09

论文类型：期刊论文

发表时间：2012-11-15

发表刊物：JOURNAL OF CRYSTAL GROWTH

收录刊物：Scopus、EI、SCIE

卷号：359

期号：1

页面范围：30-34

ISSN号：0022-0248

关键字：Nanostructures; Metalorganic chemical vapor deposition; Nanomaterials; Semiconducting III-V materials

摘要：Vertical GaAs/AlGaAs heterostructure nanowires (NWs) with pure zinc blende structure were grown on Si (111) substrates by using AlGaAs/GaAs buffer layers. Axial and radial heterostructure NWs with different facets can be realized by tuning the growth temperature, so quantum wells with a triangular cross section enclosed by two {112}and one {110} facets can be obtained. Intensity of the room temperature photoluminescence can be greatly enhanced by passivating the surface states of GaAs NWs via growth of higher band-gap AlGaAs shells. The relevant growth mechanism is discussed. (C) 2012 Elsevier B.V. All rights reserved.