高尚

个人信息Personal Information

教授

博士生导师

硕士生导师

性别:男

毕业院校:大连理工大学

学位:博士

所在单位:机械工程学院

学科:机械制造及其自动化

办公地点:机械工程学院高性能制造研究所#5015室

联系方式:手机:15104088992

电子邮箱:gaoshang@dlut.edu.cn

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磨削速度和压力对单晶硅去除特性的影响

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发表时间:2016-01-01

发表刊物:金刚石与磨料磨具工程

所属单位:机械工程学院

期号:3

页面范围:1-5,10

ISSN号:1006-852X

摘要:In order to study the damage of monocrystalline silicon, it is ground using a diamond grinding block at different normal forces and velocities. The grain size of resin bond diamond grinding block is 38 to 45 ��m. The surface roughness value Ra, subsurface damage depth dsd and material removal rate MMR of monocrystalline silicon are measured to study the effect of grinding velocity and pressure on material removal quality. Results show that the material removal rate of monocrystalline silicon firstly increases and then decreases with the increase of the grinding velocity, whereas the depth of subsurface damage decreases monotonically. The change of the subsurface damage depth is not obvious as normal force increases. When the normal force is 5 N, Ra decreases obviously with the increasing grinding speed. However, when the normal force is 10 N, Ra tends to be stable. ? 2016, Diamond & Abrasives Engineering Editorial Office. All right reserved.

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