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个人信息Personal Information
教授
博士生导师
硕士生导师
性别：男
毕业院校：大连理工大学
学位：博士
所在单位：机械工程学院
学科：机械制造及其自动化
办公地点：机械工程学院高性能制造研究所#5015室
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- [1]邱瑞鹏.郭晓光,高尚,王雪飞,Gao, Shang; Wang, Xuefei.邓曰明.Prediction model and experimental investigation of mid-spatial-frequency error in bonnet polishing of off-axis aspheric X-ray mirror[J],Optics Express,2025,33(21):44792 - 44810
- [2]滕春壮.高尚.徐徜徉,王浩祥,黄金星.Study on subsurface damage depth of multi-wire reciprocating rocking sawing photovoltaic monocrystalline silicon[A],Journal of Physics: Conference Series,2025,3080(1)
- [3]李洪钢.郭晓光,康仁科,高尚.谭天才,安东琦.Analytical mechanical model of grinding-induced warpage in open cylindrical thin-shell mirrors[J],International Journal of Mechanical Sciences,2025,307
- [4]白玉林.郭晓光,高尚.李洪钢,李金昊.Study on four-point support inversion method for removing gravity-induced deformation of quasi-cylindrical low-stiffness shell[A],Journal of Physics: Conference Series,2025,3068(1)
- [5]郭星晨.康仁科,高尚.黄金星.Catalytic performance and efficient processing mechanism in photocatalysis-assisted chemical mechanical polishing of yttrium aluminum garnet with UV-MnFe2O4/PMS photocatalytic system[J],COLLOIDS AND SURFACES A-PHYSICOCHEMICAL AND ENGINEERING ASPECTS,2025,726
- [6]徐徜徉.苏艳,康仁科,高尚.宋鑫,李柠.First-principles insights into the synergistic chemical-mechanical removal mechanism of 4H-SiC in chemical mechanical polishing[J],APPLIED SURFACE SCIENCE,2025,710
- [7]牛照松.高尚.郭嘉倪,黄金星,王浩祥.Saw marks prediction model and experimental verification in multi-wire reciprocating rocking sawing of monocrystalline silicon[A],Journal of Physics: Conference Series,2025,3080(1)
- [8]牛浩.郭晓光,高尚.李洪钢,张云龙.Study on clamping deformation of the low-stiffness cylindrical mirror considering adhesive effect[A],Journal of Physics: Conference Series,2025,3068(1)
- [9]孙跃文.高尚,Zhang, Bi,郭晓光,康仁科,董志刚.赵杨.Quantitative study of oxidation mechanism in photoelectrochemical mechanical polishing of difficult-to-process semiconductor wafers[J],INTERNATIONAL JOURNAL OF MACHINE TOOLS & MANUFACTURE,2025,210
- [10]宋鑫.Guo, Jiani,康仁科,高尚.胡博宇.Double-Oxidant-Induced Slurry Reaction Mechanism and Performance on Chemical Mechanical Polishing of 4H-SiC (0001) Wafer.[J],Langmuir : the ACS journal of surfaces and colloids,2024