边继明

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教授

博士生导师

硕士生导师

性别:男

毕业院校:中科院上海硅酸盐研究所

学位:博士

所在单位:物理学院

学科:微电子学与固体电子学. 凝聚态物理

办公地点:大连理工大学科技园C座301-1办公室

联系方式:E-mail:jmbian@dlut.edu.cn.

电子邮箱:jmbian@dlut.edu.cn

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Controllable end shape modification of ZnO nano-arrays/rods by a simple wet chemical etching technique

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论文类型:期刊论文

发表时间:2015-09-16

发表刊物:JOURNAL OF PHYSICS D-APPLIED PHYSICS

收录刊物:SCIE、EI、Scopus

卷号:48

期号:36

ISSN号:0022-3727

关键字:1D ZnO nano-arrays/rods; wet etching; etching time; end shape

摘要:The well-aligned ZnO nano-arrays/rods synthesized by a chemical bath deposition method on a highly conductive Si substrate were chemically etched in an ammonia chloride aqueous solution. An obvious end shape modification of ZnO nano-arrays/rods was realized in this report. The hexagonal frustum end of ZnO nano-arrays/rods changed into a pyramid and the diameter of ZnO nano-arrays/rods decreased gradually with the increasing etching time. The evolution mechanism of the wet etching process was discussed based on a proposed evolution model. Photoluminescence measurements indicated that the near band edge emissions of ZnO nano-arrays/rods increased greatly after wet etching. The controllable end shape modification of ZnO nano-arrays/rods on a highly conductive Si substrate by this simple wet etching technique will further explore the application of ZnO in field emission devices and 1D based nano-devices with various end shapes.