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论文类型：期刊论文

发表时间：2015-09-01

发表刊物：JOURNAL OF MATERIALS SCIENCE

收录刊物：EI、SCIE、Scopus

卷号：50

期号：17

页面范围：5709-5714

ISSN号：0022-2461

摘要：Vanadium oxide (VO (x) ) thin films were grown on single crystal sapphire substrates by pulsed laser deposition under various O-2 partial pressures. In situ AlN layer was inserted between the substrate and VO (x) films as induced stress layer. The significant influences of AlN layer on the structural, electric, and optical properties of the as-grown films were investigated systemically. The results indicated that pure monoclinic phase VO2 film with (020) preferred orientation was successfully achieved under the optimized O-2 partial pressure. Moreover, a lowered semiconductor-to-metal transition temperature and a higher optical transmittance in visible and near-infrared regions were achieved due to the introduction of AlN-induced stress layer. Our achievements suggested that it might be a promising method to modulate VO2 transition characteristics by inducing AlN-induced stress layer.