Release Time:2022-06-21  Hits:

Date of Publication: 2008-01-01

Journal: 光学精密工程

Institution: 机械工程学院

Issue: 4

Page Number: 605-610

ISSN: 1004-924X

Abstract: A new method for pulsed laser bending of single-crystal silicon was presented. An analytical model was developed to describe the spatial-time characteristics of pulsed laser, and the Finite Element Method (FEM) software ANSYS was used for simulating the laser bending process to predict the temperature field and stress-strain field in the bending process. The periodic transformations of temperature field and stress-strain distribution during pulsed laser scanning silicon sheet were analyzed. The research results indicate that the mechanism of pulsed laser bending silicon is a composite mechanism, rather than a simplex mechanism of Temperature Mechanism (TM) or Bucking Mechanism (BM). A bending experiment for silicon sheet was carried out by scanning 6 times with pulsed laser, the final bending angle is 6.5°. The simulation results are well agreement with the experiments.

Note: 新增回溯数据