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Date of Publication:2008-01-01

Journal:光学精密工程

Affiliation of Author(s):机械工程学院

Issue:4

Page Number:605-610

ISSN No.:1004-924X

Abstract:A new method for pulsed laser bending of single-crystal silicon was presented. An analytical model was developed to describe the spatial-time characteristics of pulsed laser, and the Finite Element Method (FEM) software ANSYS was used for simulating the laser bending process to predict the temperature field and stress-strain field in the bending process. The periodic transformations of temperature field and stress-strain distribution during pulsed laser scanning silicon sheet were analyzed. The research results indicate that the mechanism of pulsed laser bending silicon is a composite mechanism, rather than a simplex mechanism of Temperature Mechanism (TM) or Bucking Mechanism (BM). A bending experiment for silicon sheet was carried out by scanning 6 times with pulsed laser, the final bending angle is 6.5°. The simulation results are well agreement with the experiments.

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