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Damage mechanisms during lapping and mechanical polishing CdZnTe wafers

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Indexed by:期刊论文

Date of Publication:2010-06-01

Journal:RARE METALS

Included Journals:SCIE、EI、CSCD

Volume:29

Issue:3

Page Number:276-279

ISSN No.:1001-0521

Key Words:lapping; mechanical polishing; wafers; surface; subsurface; abrasive

Abstract:CdZnTe wafers were machined by lapping and mechanical polishing processes, and their surface and subsurface damages were investigated. The surface damages are mainly induced by three-body abrasive wear and embedded abrasive wear during lapping process. A new damage type, which is induced by the indentation of embedded abrasives, is found in the subsurface. When a floss pad is used to replace the lapping plate during machining, the surface damage is mainly induced by two-body abrasive and three-body abrasive wear, and the effect of embedded abrasives on the surface is greatly weakened. Moreover, this new damage type nearly disappears on the subsurface.

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