张贺秋

个人信息Personal Information

副教授

硕士生导师

性别:女

毕业院校:北京大学

学位:博士

所在单位:集成电路学院

学科:微电子学与固体电子学

办公地点:大连理工大学开发区校区信息楼211-1

电子邮箱:hqzhang@dlut.edu.cn

扫描关注

论文成果

当前位置: 中文主页 >> 科学研究 >> 论文成果

Photoluminescence study of Sb-doped ZnO films deposited by a closed tube CVT technique

点击次数:

论文类型:期刊论文

发表时间:2011-01-11

发表刊物:VACUUM

收录刊物:Scopus、SCIE、EI

卷号:85

期号:6

页面范围:718-720

ISSN号:0042-207X

关键字:Sb-doped; Zinc oxide; Photoluminescence; Closed tube

摘要:Sb-doped ZnO film was obtained by CVT technique in a closed tube, and the temperature dependence of its photoluminescence spectrum was also investigated. The Sb-related photoluminescence peaks were observed. The peaks occurred at 3.352, 3.312, 3.240 and 3.168 eV were respectively assigned to the neutral acceptor-bound excition, free electron to acceptor transitions, and the first- and second-longitudinal optical phonon replicas emissions. The acceptor binding energy was determined to be 125 meV, aided by free electron to acceptor transition. (C) 2010 Elsevier Ltd. All rights reserved.