个人信息Personal Information
副教授
硕士生导师
性别:女
毕业院校:北京大学
学位:博士
所在单位:集成电路学院
学科:微电子学与固体电子学
办公地点:大连理工大学开发区校区信息楼211-1
电子邮箱:hqzhang@dlut.edu.cn
Photoluminescence study of Sb-doped ZnO films deposited by a closed tube CVT technique
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论文类型:期刊论文
发表时间:2011-01-11
发表刊物:VACUUM
收录刊物:Scopus、SCIE、EI
卷号:85
期号:6
页面范围:718-720
ISSN号:0042-207X
关键字:Sb-doped; Zinc oxide; Photoluminescence; Closed tube
摘要:Sb-doped ZnO film was obtained by CVT technique in a closed tube, and the temperature dependence of its photoluminescence spectrum was also investigated. The Sb-related photoluminescence peaks were observed. The peaks occurred at 3.352, 3.312, 3.240 and 3.168 eV were respectively assigned to the neutral acceptor-bound excition, free electron to acceptor transitions, and the first- and second-longitudinal optical phonon replicas emissions. The acceptor binding energy was determined to be 125 meV, aided by free electron to acceptor transition. (C) 2010 Elsevier Ltd. All rights reserved.