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论文类型：期刊论文

发表时间：2008-12-01

发表刊物：MICRO & NANO LETTERS

收录刊物：SCIE、EI、Scopus

卷号：3

期号：4

页面范围：117-120

ISSN号：1750-0443

摘要：Superlattices of ZnO/Zn0.85Mg0.15O were grown on a sapphire ( 0 0 0 1) substrate by the pulsed laser deposition method. Before the growth, ZnO buffer layers were grown at 650 degrees C and an oxygen pressure of 60 Pa for 30 min. The results of the scanning electron microscope exhibit that the films with a buffer layer consist of well c-axis oriented nanoneedles with a size range from 50 to 150 nm. Compared with the film without a buffer layer, the film with a buffer layer has a stronger peak energy when the well widths are almost the same. It is evident that the buffer layer could increase the quality of the superlattice and this nanostructure would be useful to research the microcavity.