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论文类型：期刊论文

发表时间：2008-10-13

发表刊物：CHEMICAL PHYSICS LETTERS

收录刊物：SCIE、EI、Scopus

卷号：464

期号：1-3

页面范围：69-72

ISSN号：0009-2614

摘要：ZnO nanorods were synthesized on an InP substrate by pulsed laser deposition technique at 400 and 500 degrees C. Low-temperature photoluminescence measurements were conducted to investigate the optical properties of the ZnO nanorods. It revealed that phosphorus-doped ZnO (ZnO: P) nanorods were formed by the diffusion of phosphorus from the InP substrate at 500 degrees C, and four acceptor-bound exciton-related emission peaks emerged in the PL spectrum of ZnO:P nanorods. The effect of phosphorus-doping on the optical characteristics of the ZnO nanorods was investigated by excitation intensity and temperature dependent PL spectra. The binding energies of the acceptor were calculated to be similar to 125 meV. (C) 2008 Elsevier B.V. All rights reserved.